View IRHF3230_8565517.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 5.5 i d @ v gs = 12v, t c = 100c continuous drain current 3.5 i dm pulsed drain current 22 p d @ t c = 25c max. power dissipation 25 w linear derating factor 0.2 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 240 mj i ar avalanche current 5.5 a e ar repetitive avalanche energy 2.5 mj dv/dt peak diode recovery dv/dt 5.0 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063 in. (1.6mm) from case for 10s) weight 0.98 (typical) g pre-irradiation international rectifiers rad-hard tm hexfet ? technology provides high performance powermosfets for space applications. this technology has over a decade of proven performance and reliability in satellite applications. these devices have been characterized for both total dose and single event effects (see). the combination of low rdson and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. o c a radiation hardenedpower mosfet thru-hole (to-39) www.irf.com 1 200v, n-channel rad-hard ? hexfet ? technology product summary part number radiation level r ds(on) i d qpl part number irhf7230 100k rads (si) 0.35 ? 5.5a jansr2n7262 IRHF3230 300k rads (si) 0.35 ? 5.5a jansf2n7262 irhf4230 500k rads (si) 0.35 ? 5.5a jansg2n7262 irhf8230 1000k rads (si) 0.35 ? 5.5a jansh2n7262 features: single event effect (see) hardened low r ds(on) low total gate charge simple drive requirements ease of paralleling hermetically sealed light weight

irhf7230 to-39 ref: mil-prf-19500/601 pd - 90672e jansr2n7262 downloaded from: http:///
2 www.irf.com irhf7230, jansr2n7262 pre- irradiation electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 200 v v gs =0 v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown 0.25 v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source 0.35 v gs = 12v, i d = 3.5a on-state resistance 0.36 ? v gs = 12v, i d = 5.5a v gs(th) gate threshold voltage 2.0 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 2.5 s ( )v ds > 15v, i ds = 3.5a i dss zero gate voltage drain current 25 v ds = 160v,v gs =0v 250 v ds = 160v v gs = 0v, t j = 125c i gss gate-to-source leakage forward 100 v gs = 20v i gss gate-to-source leakage reverse -100 v gs = -20v q g total gate charge 50 v gs = 12v, i d = 5.5a q gs gate-to-source charge 10 nc v ds = 100v q gd gate-to-drain (miller) charge 25 t d (on) turn-on delay time 25 v dd = 100v, i d = 5.5a, t r rise time 40 v gs = 12v, r g = ? t d (off) turn-off delay time 60 t f fall time 45 l s + l d total inductance 7.0 c iss input capacitance 1100 v gs = 0v, v ds = 25v c oss output capacitance 250 p f f = 1.0mhz c rss reverse transfer capacitance 55 na ? nh ns a note: corresponding spice and saber models are available on the international rectifier website.

thermal resistance parameter min typ max units t est conditions r thjc junction-to-case 5.0 r thja junction-to-ambient 175 t ypical socket mount c/w source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) 5.5 i sm pulse source current (body diode) 22 v sd diode forward voltage 1.4 v t j = 25c, i s = 5.5a, v gs = 0v t rr reverse recovery time 400 ns t j = 25c, i f = 5.5a, di/dt 100a/ s q rr reverse recovery charge 3.0 c v dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a measured from drain lead (6mm/0.25in. frompackage) to source lead (6mm/0.25in. from package) downloaded from: http:///
www.irf.com 3 pre-irradiation irhf7230, jansr2n7262 table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter 100k rads(si) 1 300k - 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 200 200 v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 1.25 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward 100 100 na v gs = 20v i gss gate-to-source leakage reverse -100 -100 v gs = -20 v i dss zero gate voltage drain current 25 50 a v ds =160v, v gs =0v r ds(on) static drain-to-source 0.35 0.48 ? v gs = 12v, i d =3.5a on-state resistance (to-3) r ds(on) static drain-to-source 0.35 0.48 ? v gs = 12v, i d =3.5a on-state resistance (to-39) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. radiation characteristics 1. part number irhf7230 (jansr2n7262)2. part numbers IRHF3230 (jansf2n7262), irhf4230 (jansg2n7262) and irhf8230 (jansh2n7262) fig a. single event effect, safe operating area v sd diode forward voltage 1.4 1.4 v v gs = 0v, i s = 5.5a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2.

0 50 100 150 200 0 -5 -10 -15 -20 vgs vds cu br table 2. single event effect safe operating area ion let energy range v ds(v) (mev/(mg/cm 2 )) (mev) (m) @ v gs =0v @ v gs =-5v @ v gs =-10v @ v gs =-15v @ v gs =-20v cu 28 285 43 190 180 170 125 br 36.8 305 39 100 100 100 50 downloaded from: http:///
4 www.irf.com irhf7230, jansr2n7262 pre- irradiation post-irradiation fig 2. typical response of on-state resistance vs. total dose exposure fig 1. typical response of gate threshhold voltage vs. total dose exposure fig 3. typical response of transconductance vs. total dose exposure fig 4. typical response of drain to source breakdown vs. total dose exposure downloaded from: http:///
www.irf.com 5 pre-irradiation irhf7230, jansr2n7262 post-irradiation fig 6. typical on-state resistance vs. neutron fluence level fig 5. typical zero gate voltage drain current vs. total dose exposure fig 8b. v dss stress equals 80% of b vdss during radiation fig 9. high dose rate (gamma dot) test circuit fig 7. typical transient response of rad hard hexfet during 1x10 12 rad (si)/sec exposure fig 8a. gate stress of v gss equals 12 volts during radiation downloaded from: http:///
6 www.irf.com irhf7230, jansr2n7262 pre- irradiation post-irradiation radiation characteristics fig 11. typical output characteristics post-irradiation 100k rads (si) fig 10. typical output characteristics pre-irradiation fig 12. typical output characteristics post-irradiation 300k rads (si) fig 13. typical output characteristics post-irradiation 1 mega rads (si) note: bias conditions during radiation: v gs = 12 vdc, v ds = 0 vdc downloaded from: http:///
www.irf.com 7 pre-irradiation irhf7230, jansr2n7262 radiation characteristics fig 16. typical output characteristics post-irradiation 300k rads (si) fig 17. typical output characteristics post-irradiation 1 mega rads (si) fig 14. typical output characteristics pre-irradiation fig 15. typical output characteristics post-irradiation 100k rads (si) note: bias conditions during radiation: v gs = 0 vdc, v ds = 160 vdc downloaded from: http:///
8 www.irf.com irhf7230, jansr2n7262 pre- irradiation

downloaded from: http:///
www.irf.com 9 pre-irradiation irhf7230, jansr2n7262

!

!

"

" "
#$
0.1 1 10 100 1 10 100 100 0 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms downloaded from: http:///
10 www.irf.com irhf7230, jansr2n7262 pre- irradiation $

v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f $
%&

1 0.1 % + - '
&

(

)*
"

v gs 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) downloaded from: http:///
www.irf.com 11 pre-irradiation irhf7230, jansr2n7262 q g q gs q gd v g charge d.u.t. v d s i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - +,
!

-!

%&
&
'
"
.
( &
%&
.
( &

t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs downloaded from: http:///
12 www.irf.com irhf7230, jansr2n7262 pre- irradiation pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 160 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 25v, starting t j = 25c, l= 15.9mh peak i l = 5.5a, v gs = 12v i sd 5.5a, di/dt 120a/ s, v dd 200v, t j 150c case outline and dimensions to-39 foot notes: legend 1- source 2- gate 3- drain ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 05/2006 downloaded from: http:///

▲Up To Search▲

Price & Availability of IRHF3230

	To Download IRHF3230 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .